GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients epub
GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients epub
GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients by Henning Doscher
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Author: Henning Doscher
Number of Pages: 157 pages
Published Date: 11 Dec 2013
Publisher: Springer International Publishing AG
Publication Country: Cham, Switzerland
Language: English
Format: Pdf
ISBN: 9783319028798
File size: 37 Mb
File Name: GaP.Heteroepitaxy.on.Si(100).Benchmarking.Surface.Signals.When.Growing.GaP.on.Si.in.CVD.Ambients.pdf
Download Link: GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients
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Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
Read online GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients Buy and read online GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients Download and read GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients for pc, mac, kindle, readers Download to iPad/iPhone/iOS, B&N nook GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients
GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients by Henning Doscher
Author: Henning Doscher
Number of Pages: 157 pages
Published Date: 11 Dec 2013
Publisher: Springer International Publishing AG
Publication Country: Cham, Switzerland
Language: English
Format: Pdf
ISBN: 9783319028798
File size: 37 Mb
File Name: GaP.Heteroepitaxy.on.Si(100).Benchmarking.Surface.Signals.When.Growing.GaP.on.Si.in.CVD.Ambients.pdf
Download Link: GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients
---------------------------------------------------------------
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
Read online GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients Buy and read online GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients Download and read GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients for pc, mac, kindle, readers Download to iPad/iPhone/iOS, B&N nook GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals When Growing GaP on Si in CVD Ambients